2N5550 GP BJT
Datasheet: View
Stock
- 71 CARSON
- 915 CARTER
- 5514 FAIRCHILD
- 23 KSL
- 790 MICROSEMI CONDUCTOR
- 6921 MOTOROLA
- 57114 NATIONAL SEMICONDUCTOR
- 1662 NEW JERSEY SEMICONDUCTOR
- 1400 TEXAS INSTRUMENTS
- 12 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@1mA@10mA|0.25@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 140 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 300 | MHz |
| Type | NPN |