2N5551 GP BJT
Datasheet: View
Stock
- 447 ADT
- 10843 ADVANCED MICRO DEVICES
- 2358 FAIRCHILD
- 3 INTERNATIONAL DEVICES INC
- 17231 MOTOROLA
- 24134 NATIONAL SEMICONDUCTOR
- 7931 NEW JERSEY SEMICONDUCTOR
- 760 NUCLEAR PRODUCTS CORP
- 5049 PHILIPS
- 9 SOLID STATE TRANSISTOR
- 36 SOLITRON
- 3815 SPRAGUE
- 81 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 180 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@1mA@10mA|0.2@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 300 | MHz |
| Type | NPN |