2N5552 GP BJT
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Stock
- 14 NEW JERSEY SEMICONDUCTOR
- 9 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.5mA@5mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Power Dissipation | 15000 | mW |
| Type | NPN |