2N5560 GP BJT
Datasheet: View
Stock
- 13 NEW JERSEY SEMICONDUCTOR
- 1 RF POWER
Trans GP BJT NPN 120V 30A 3-Pin TO-63
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.8@1.5mA@15mA | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Power Dissipation | 150000 | mW |
| Type | NPN |