2N5581 GP BJT
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- 32419 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 50V 0.8A 3-Pin TO-46
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@15mA@150mA | 1@50mA@500mA |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.8 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | NPN |