2N5582 GP BJT

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  • 115 MOTOROLA
  • 21579 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 0.8A 3-Pin TO-46

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Saturation Voltage 0.3@15mA@150mA|1@50mA@500mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 500 mW
Type NPN