2N5601 GP BJT

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  • 4 KRC
  • 2975 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 2A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.85@0.2mA@1mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 20000 mW
Type PNP