2N5605 GP BJT

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  • 2979 NEW JERSEY SEMICONDUCTOR
  • 1 SILICON TRANSISTOR CORP

Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@0.25mA@2.5mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 25000 mW
Type PNP