2N5616 GP BJT
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- 1101 NEW JERSEY SEMICONDUCTOR
- 10 RF POWER
Trans GP BJT NPN 80V 5A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.5mA@2.5mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Power Dissipation | 58000 | mW |
| Type | NPN |