2N5620 GP BJT

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  • 3 API
  • 1899 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 5A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@0.5mA@2.5mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 58000 mW
Type NPN