2N5624 GP BJT

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  • 2314 NEW JERSEY SEMICONDUCTOR
  • 55 WORLD WIDE

Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1mA@5mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 116000 mW
Type NPN