2N5630 GP BJT
Datasheet: View
Stock
- 6 HARRIS
- 3 MOTOROLA
- 12607 NEW JERSEY SEMICONDUCTOR
- 5 RCA
- 1 RF POWER
- 6 SOLID SATE
- 3 SOLID STATE INC
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|2@4A@16A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 16 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Maximum Transition Frequency | 1(Min) | MHz |
| Type | NPN |