2N5637 GP BJT

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  • 233 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 2@10A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 1(Min) MHz
Type NPN