2N5637 GP BJT
Datasheet: View
Stock
- 233 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 2@10A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 1(Min) | MHz |
| Type | NPN |