2N5641 RF BJT
Datasheet: View
Stock
- 14 API
- 5 MOTOROLA
- 84 NEW JERSEY SEMICONDUCTOR
- 1 RFGAIN
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Maximum Collector Base Voltage | 65 | V |
| Maximum Collector Emitter Voltage | 35 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 5@100mA@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 7(Min) | W |
| Type | NPN |