2N5643 RF BJT

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  • 1 MICROSEMI CONDUCTOR
  • 237 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 5A 4-Pin Style M135

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Features Values Unit
Configuration Single Dual Emitter
Maximum Collector Base Voltage 65 V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Minimum DC Current Gain 5@500mA@5V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Output Power 70(Min) W
Type NPN