2N5657 GP BJT
Datasheet: View
Stock
- 550 MOTOROLA
- 413 NATIONAL SEMICONDUCTOR
- 485 NEW JERSEY SEMICONDUCTOR
- 1000 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 375 | V |
| Maximum Collector Emitter Saturation Voltage | 1@10mA@100mA|2.5@25mA@250mA|10@100mA@500mA | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 20000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | NPN |