2N5658 GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.5@0.5mA@5mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 30000 mW
Type NPN