2N5659 GP BJT
Datasheet: View
Stock
- 54 NATIONAL SEMICONDUCTOR
- 87 NEW JERSEY SEMICONDUCTOR
- 1 SEMICOA
- 4 SILICON TRANSISTOR CORP
- 20 SOLITRON
- 1 SOLITRON DEVICES
- 20 TOMMORROW
Trans GP BJT NPN 80V 10A 4-Pin TO-111
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.5mA@5mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Power Dissipation | 30000 | mW |
| Type | NPN |