2N5660 GP BJT
Datasheet: View
Stock
- 24 AMPEREX
- 4 GENERAL SEMICONDUCTOR
- 1 MOTOROLA
- 2394 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@0.1A@1A|0.8@0.4A@2A | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |