2N5661 GP BJT

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  • 1 GENERAL SEMICONDUCTOR
  • 1 MOTOROLA
  • 140 NEW JERSEY SEMICONDUCTOR
  • 945 UNITRODE
  • 1 WORLD WIDE

Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 0.4@0.1A@1A|0.8@0.4A@2A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 2000 mW
Type NPN