2N5663 GP BJT

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  • 1034 NEW JERSEY SEMICONDUCTOR
  • 1 SEMICOA

Trans GP BJT NPN 300V 2A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 0.4@0.1A@1A|0.8@0.4A@2A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN