2N5664 GP BJT
Datasheet: View
Stock
- 128 API
- 8 GENERAL SEMICONDUCTOR
- 3184 NEW JERSEY SEMICONDUCTOR
- 1 SILICON TRANSISTOR CORP
- 62 SOLITRON
- 61 UNITRODE
- 50 UNITRODE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@5A|0.4@0.3A@3A | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2500 | mW |
| Type | NPN |