2N5665 GP BJT
Datasheet: View
Stock
- 536 NEW JERSEY SEMICONDUCTOR
- 20 SILICON TRANSISTOR CORP
- 1 UNITRODE
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 400 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@5A|0.4@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2500 | mW |
| Type | NPN |