2N5666 GP BJT
Datasheet: View
Stock
- 26 NEW JERSEY SEMICONDUCTOR
- 15 SOLITRON
- 32 UNITRODE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@5A|0.4@0.3A@3A | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1200 | mW |
| Type | NPN |