2N5672 GP BJT
Datasheet: View
Stock
- 4 GENERAL ELECTRIC
- 11 GENERAL SEMICONDUCTOR
- 8 HARRIS
- 1147 NEW JERSEY SEMICONDUCTOR
- 60 RCA
- 48 SGS
- 4 SILICON TRANSISTOR CORP
- 5 SOLITRON
- 3 TEXAS INSTRUMENT
- 8 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@1.2A@15A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 140000 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |