2N5672S GP BJT

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  • 7 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 0.75@1.2A@15A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 140000 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN