2N5680 GP BJT
Datasheet: View
Stock
- 42 ADVANCED SEMI
- 81 API
- 20 CONTINENTAL DEVICES
- 1226 FAIRCHILD
- 175 MOTOROLA
- 707 NEW JERSEY SEMICONDUCTOR
- 20 PHILIPS
- 2 SILICON TRANSISTOR CORP
- 40 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@25mA@250mA|1@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |