2N5681 GP BJT
Datasheet: View
Stock
- 29 FAIRCHILD
- 27 MOTOROLA
- 2068 NEW JERSEY SEMICONDUCTOR
- 3 ST MICRO
- 10 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@25mA@250mA|1@50mA@500mA|2@200mA@1A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 30(Min) | MHz |
| Type | NPN |