2N5684 GP BJT
Datasheet: View
Stock
- 383 MOTOROLA
- 11274 NEW JERSEY SEMICONDUCTOR
- 1278 ON SEMI
- 5 SILICON TRANSISTOR CORP
- 128 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1@2.5A@25A|5@10A@50A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 300000 | mW |
| Type | NPN |