2N5685 GP BJT
Datasheet: View
Stock
- 3 FAIRCHILD
- 90 MOTOROLA
- 2913 NEW JERSEY SEMICONDUCTOR
- 13 SILICON TRANSISTOR CORP
- 50 SOLID SATE
- 145 SOLITRON
- 341 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1@2.5A@25A|5@10A@50A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 300000 | mW |
| Type | NPN |