2N5729 GP BJT
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- 2317 NEW JERSEY SEMICONDUCTOR
- 10 SILICON TRANSISTOR CORP
Trans GP BJT NPN 80V 5A 3-Pin TO-5
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.5mA@2mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |