2N5730 GP BJT

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  • 118 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@0.5mA@2mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 45000 mW
Type NPN