2N5740 GP BJT

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  • 4116 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 100V 10A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.5@0.5mA@5mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 35000 mW
Type PNP