2N5745 GP BJT
Datasheet: View
Stock
- 3 MOTOROLA
- 3181 NEW JERSEY SEMICONDUCTOR
- 27 RF POWER
- 1 TRANSITRON
- 11 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.55@0.5A@5A|1@1A@10A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | PNP |