2N5777 RF BJT
Datasheet: View
Stock
- 48017 GENERAL ELECTRIC
- 30 MOTOROLA
- 3518 NEW JERSEY SEMICONDUCTOR
- 4 SOLID STATE TRANSISTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage | 1@1mA@10mA | V |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 900(Min) | MHz |
| Minimum DC Current Gain | 20@3mA@1V|50@8mA@1V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |