2N5777 RF BJT

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  • 48017 GENERAL ELECTRIC
  • 30 MOTOROLA
  • 3518 NEW JERSEY SEMICONDUCTOR
  • 4 SOLID STATE TRANSISTOR

Trans GP BJT NPN 15V 0.05A 3-Pin TO-92 T/R

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Features Values Unit
Configuration Single
Material Si
Maximum Base Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 15 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 3 V
Maximum Operating Temperature 150 °C
Maximum Transition Frequency 900(Min) MHz
Minimum DC Current Gain 20@3mA@1V|50@8mA@1V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Type NPN