2N5781 GP BJT
Datasheet: View
Stock
- 1 GENERAL ELECTRIC
- 8 GENERAL TRANSISTOR
- 1 HARRIS
- 4 MOTOROLA
- 1563 NEW JERSEY SEMICONDUCTOR
- 97 RCA
- 3 SEMICOA
- 87 SILICON TRANSISTOR CORP
- 23 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@100mA@1A | V |
| Maximum Collector Emitter Voltage | 65 | V |
| Maximum DC Collector Current | 3.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 10000 | mW |
| Maximum Transition Frequency | 60 | MHz |
| Type | PNP |