2N5783 GP BJT
Datasheet: View
Stock
- 2641 NEW JERSEY SEMICONDUCTOR
- 3 RCA
- 1 TRANSITRON
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 45 | V |
| Maximum Collector Emitter Saturation Voltage | 1@160mA@1.6A|2@800mA@3.2A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 3.5 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 10000 | mW |
| Maximum Transition Frequency | 60 | MHz |
| Type | PNP |