2N5784 GP BJT
Datasheet: View
Stock
- 11 ADVANCED SEMI
- 4 GENERAL ELECTRIC
- 4123 NEW JERSEY SEMICONDUCTOR
- 14 RCA
- 7 SGS
- 2 SIEMENS
- 108 SILICON TRANSISTOR CORP
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@100mA@1A | V |
| Maximum Collector Emitter Voltage | 65 | V |
| Maximum DC Collector Current | 3.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 10000 | mW |
| Maximum Transition Frequency | 4 | MHz |
| Type | NPN |