2N5794 GP BJT
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- 14 MOTOROLA
- 21 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 40V 0.6A 6-Pin TO-78
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Dual | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@15mA@150mA | 0.9@30mA@300mA |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 600 | mW |
| Type | NPN |