2N5795 GP BJT

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  • 1 MOTOROLA
  • 138 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 0.6A 6-Pin TO-78

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Features Values Unit
Category Bipolar Power
Configuration Dual
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@15mA@150mA 1.6@50mA@500mA
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 600 mW
Type PNP