2N5796 GP BJT
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- 117 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 60V 0.6A 6-Pin TO-78
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Dual | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@15mA@150mA | 1.6@50mA@500mA |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 600 | mW |
| Type | PNP |