2N5809 GP BJT

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  • 43 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 225V 5A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@0.5mA@5mA V
Maximum Collector Emitter Voltage 225 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 62000 mW
Type NPN