2N5813 GP BJT

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  • 1541 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 25V

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.75@500mA V
Maximum Collector Emitter Voltage 25 V
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 135(Min) MHz
Type PNP