2N5816 GP BJT
Datasheet: View
Stock
- 317 NATIONAL SEMICONDUCTOR
- 568 NEW JERSEY SEMICONDUCTOR
- 6 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.75 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 120(Min) | MHz |
| Type | NPN |