2N5882A GP BJT

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  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.7mA@6mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 15 A
Maximum Power Dissipation 160000 mW
Type NPN