2N5910 GP BJT
Datasheet: View
Stock
- 21 CENTAL SEMI
- 110 NATIONAL SEMICONDUCTOR
- 385 NEW JERSEY SEMICONDUCTOR
- 70 SOLID SATE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.15@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 310 | mW |
| Maximum Transition Frequency | 700(Min) | MHz |
| Type | PNP |