2N5930 GP BJT

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  • 2365 NEW JERSEY SEMICONDUCTOR
  • 20 SILICON TRANSISTOR CORP

Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN