2N5931 GP BJT

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  • 2368 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 160V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@0.66mA@10mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 175000 mW
Type NPN