2N5932 GP BJT

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  • 3693 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN