2N5936 GP BJT

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  • 1272 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@2mA@30mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 175000 mW
Type NPN